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| Manufacturer Part Number: | APT33N90JCU3 |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 900V 33A SOT227 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | APT33N90JCU3 Datasheet |
| Internal Part Number | 898-APT33N90JCU3 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Packaging | Tray | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Super Junction | |
| Drain to Source Voltage (Vdss) | 900V | |
| Current - Continuous Drain (Id) @ 25°C | 33A | |
| Rds On (Max) @ Id, Vgs | 120 mOhm @ 26A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA | |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 6800pF @ 100V | |
| Power - Max | 290W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Supplier Device Package | SOT-227 | |
| Standard Package | 1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | APT33N90JCU3 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
APT33N90JCU3 is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of APT33N90JCU3 is new and unused, you can buy APT33N90JCU3 Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for APT33N90JCU3.
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