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| Manufacturer Part Number: | APTM100DDA35T3G |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Transistors - FETs, MOSFETs - Arrays |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET 2N-CH 1000V 22A SP3 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | APTM100DDA35T3G Datasheet |
| Internal Part Number | 898-APTM100DDA35T3G | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Packaging | Bulk | |
| Part Status | Active | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 22A | |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 186nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 5200pF @ 25V | |
| Power - Max | 390W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | SP3 | |
| Supplier Device Package | SP3 | |
| Standard Package | 1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | APTM100DDA35T3G | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
APTM100DDA35T3G is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of APTM100DDA35T3G is new and unused, you can buy APTM100DDA35T3G Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for APTM100DDA35T3G.
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