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CSD16323Q3C

CSD16323Q3C
Manufacturer Part Number:CSD16323Q3C
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:11510 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 25V 60A 8SON
Lead Free Status / RoHS Status:Contains lead / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: CSD16323Q3C Datasheet
CSD16323Q3C´s Parameters
Internal Part Number898-CSD16323Q3C
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
Product Training ModulesNexFET MOSFET Technology
Video FilePowerStack™ Packaging Technology Overview
Featured ProductCreate your power design now with TI’s WEBENCH® Designer
PCN Design/SpecificationQualification Revision A 01/Jul/2014
Manufacturer Product PageCSD16323Q3C Specifications
Online Catalog N-Channel Logic Level Gate FETs
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerT I
SeriesNexFET™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs4.5 mOhm @ 24A, 8V
Vgs(th) (Max) @ Id1.4V @ 250µA
Gate Charge (Qg) @ Vgs8.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds1300pF @ 12.5V
Power - Max3W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-SON Exposed Pad (3x3)
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartCSD16323Q3C
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

CSD16323Q3C is in stock for immediate shipping now. We are the distributor of T-I all series components. The condition of CSD16323Q3C is new and unused, you can buy CSD16323Q3C T-I with us at a very low price and quick delivery.

Please kindly send us an email if you have any demands for CSD16323Q3C.

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