Manufacturer Part Number: | DMTH4004SK3-13 |
---|---|
Manufacturer: | Diodes Incorporated |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET BVDSS: 31V 40V TO252 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | DMTH4004SK3-13 Datasheet |
Internal Part Number | 898-DMTH4004SK3-13 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Diodes Incorporated | |
Series | - | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 90A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 68.6nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 4305pF @ 25V | |
Power - Max | 3.9W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | TO-252 | |
Standard Package | 2,500 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | DMTH4004SK3-13 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
DMTH4004SK3-13 is in stock for immediate shipping now. We are the distributor of Diodes Incorporated all series components. The condition of DMTH4004SK3-13 is new and unused, you can buy DMTH4004SK3-13 Diodes Incorporated with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for DMTH4004SK3-13.
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