Manufacturer Part Number: | GP1M003A080FH |
---|---|
Manufacturer: | Global Power Technologies Group |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9985 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 800V 3A TO220F |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | GP1M003A080FH Datasheet |
Internal Part Number | 898-GP1M003A080FH | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Global Power Technologies Group | |
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) | |
Rds On (Max) @ Id, Vgs | 4.2 Ohm @ 1.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 19nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 696pF @ 25V | |
Power - Max | 32W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 Full Pack | |
Supplier Device Package | TO-220F | |
Standard Package | 1 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | GP1M003A080FH | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
GP1M003A080FH is in stock for immediate shipping now. We are the distributor of Global Power Technologies Group all series components. The condition of GP1M003A080FH is new and unused, you can buy GP1M003A080FH Global Power Technologies Group with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for GP1M003A080FH.
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