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GT60N321(Q)

GT60N321(Q)
Manufacturer Part Number:GT60N321(Q)
Manufacturer:
Product Category:Transistors - IGBTs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:IGBT 1000V 60A 170W Through Hole TO-3P(LH)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):Obsolete / Discontinued
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: GT60N321(Q) Datasheet
GT60N321(Q)´s Parameters
Internal Part Number898-GT60N321(Q)
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
EDA / CAD Models Download from Accelerated Designs
CategoryDiscrete Semiconductor Products
FamilyTransistors - IGBTs - Single
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTube
Part StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5µs
Package / CaseTO-3PL
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(LH)
Standard Package 100
Weight0.001 KG
ApplicationEmail for details
Replacement PartGT60N321(Q)
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

GT60N321(Q) is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of GT60N321(Q) is new and unused, you can buy GT60N321(Q) Toshiba Semiconductor and Storage with us at a very low price and quick delivery.

Please kindly send us an email if you have any demands for GT60N321(Q).

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