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IPB029N06N3GE8187ATMA1

IPB029N06N3GE8187ATMA1
Manufacturer Part Number:IPB029N06N3GE8187ATMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 60V 120A TO263-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPB029N06N3GE8187ATMA1 Datasheet
IPB029N06N3GE8187ATMA1´s Parameters
Internal Part Number898-IPB029N06N3GE8187ATMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4V @ 118µA
Gate Charge (Qg) @ Vgs165nC @ 10V
Input Capacitance (Ciss) @ Vds13000pF @ 30V
Power - Max188W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3
Standard Package 1,000
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPB029N06N3GE8187ATMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

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