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IPB042N10N3GE8187ATMA1

IPB042N10N3GE8187ATMA1
Manufacturer Part Number:IPB042N10N3GE8187ATMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 100V 100A TO263-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPB042N10N3GE8187ATMA1 Datasheet
IPB042N10N3GE8187ATMA1´s Parameters
Internal Part Number898-IPB042N10N3GE8187ATMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingDigi-Reel®
Part StatusDiscontinued
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs4.2 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id3.5V @ 150µA
Gate Charge (Qg) @ Vgs117nC @ 10V
Input Capacitance (Ciss) @ Vds8410pF @ 50V
Power - Max214W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3
Standard Package 1
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPB042N10N3GE8187ATMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

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