Manufacturer Part Number: | IPB083N10N3 G |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 10010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 100V 80A TO263-3 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IPB083N10N3 G Datasheet |
Internal Part Number | 898-IPB083N10N3 G | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 73A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
Gate Charge (Qg) @ Vgs | 55nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 3980pF @ 50V | |
Power - Max | 125W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Supplier Device Package | PG-TO263-2 | |
Standard Package | 1,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IPB083N10N3 G | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IPB083N10N3 G is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPB083N10N3 G is new and unused, you can buy IPB083N10N3 G Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IPB083N10N3 G.
SZMMSZ4711T1G | Zener Diode 27V 500mW ±5% Surface Mount SOD-123 | SZMMSZ4711T1G.pdf | |
STB9NK60ZT4 | MOSFET N-CH 600V 7A D2PAK | STB9NK60ZT4.pdf | |
IXFH20N60 | MOSFET N-CH 600V 20A TO-247AD | IXFH20N60.pdf | |
NTTS2P02R2G | MOSFET P-CH 20V 2.4A 8MICRO | NTTS2P02R2G.pdf | |
8N4SV76EC-0090CDI8 | VCXO IC 159.375MHz 6-CLCC | 8N4SV76EC-0090CDI8.pdf | |
8N4DV85BC-0054CDI | VCXO IC 25MHz, 33.33MHz 6-CLCC | 8N4DV85BC-0054CDI.pdf | |
8N3QV01EG-0073CDI | VCXO IC 312.5MHz, 156.25MHz, 125MHz, 100MHz 10-CLCC | 8N3QV01EG-0073CDI.pdf | |
EPF10K20RC240-4 | IC FPGA 189 I/O 240RQFP | EPF10K20RC240-4.pdf | |
LPV358DDURE4 | General Purpose Amplifier 2 Circuit Rail-to-Rail 8-VSSOP | LPV358DDURE4.pdf |