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IPB80N06S2L09ATMA1

IPB80N06S2L09ATMA1
Manufacturer Part Number:IPB80N06S2L09ATMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 55V 80A TO263-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPB80N06S2L09ATMA1 Datasheet
IPB80N06S2L09ATMA1´s Parameters
Internal Part Number898-IPB80N06S2L09ATMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab/Test Site Addition 16/Oct/2014
Wafer Fab/Test Site Addition 15/Dec/2014
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusNot Available
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 52A, 10V
Vgs(th) (Max) @ Id2V @ 125µA
Gate Charge (Qg) @ Vgs105nC @ 10V
Input Capacitance (Ciss) @ Vds2620pF @ 25V
Power - Max190W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-3-2
Standard Package 1,000
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPB80N06S2L09ATMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

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