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IPD082N10N3GBTMA1

IPD082N10N3GBTMA1
Manufacturer Part Number:IPD082N10N3GBTMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 100V 80A TO252-3
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):Obsolete / Discontinued
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPD082N10N3GBTMA1 Datasheet
IPD082N10N3GBTMA1´s Parameters
Internal Part Number898-IPD082N10N3GBTMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMult Dev EOL 20/Oct/2015
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesOptiMOS™
PackagingTape & Reel (TR)
Part StatusObsolete
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8.2 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 75µA
Gate Charge (Qg) @ Vgs55nC @ 10V
Input Capacitance (Ciss) @ Vds3980pF @ 50V
Power - Max125W
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPD082N10N3GBTMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

IPD082N10N3GBTMA1 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPD082N10N3GBTMA1 is new and unused, you can buy IPD082N10N3GBTMA1 Infineon Technologies with us at a very low price and quick delivery.

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