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IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1
Manufacturer Part Number:IPD65R1K4CFDBTMA1
Manufacturer:
Product Category:Transistors - FETs, MOSFETs - Single
Available Quantity:9010 Pieces
Unit Price:Quote by Email
Description:MOSFET N-CH 650V 2.8A TO-252
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL):1 (Unlimited)
Production Status (Lifecycle):In Production
Delivery Time:1-2 Days
Date Code (D/C):New
Datasheet Download: IPD65R1K4CFDBTMA1 Datasheet
IPD65R1K4CFDBTMA1´s Parameters
Internal Part Number898-IPD65R1K4CFDBTMA1
Manufacturer Lead time6-8 weeks
ConditionNew & Unused, Original Sealed
PCN PackagingCover Tape Width Update 17/Jun/2015
Cover Tape Width Cancellation 14/Jul/2015
PCN Part Status ChangeHalogen Free Upgrade 22/Aug/2013
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerInfineon Technologies
SeriesCoolMOS™
PackagingTape & Reel (TR)
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Rds On (Max) @ Id, Vgs1.4 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) @ Vgs10nC @ 10V
Input Capacitance (Ciss) @ Vds262pF @ 100V
Power - Max28.4W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackagePG-TO252-3
Standard Package 2,500
Weight0.001 KG
ApplicationEmail for details
Replacement PartIPD65R1K4CFDBTMA1
Country of OriginUSA / JAPAN / Philippines / Malaysia
MOQ1 Piece
Picture / Image / PhotoSend via email

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