Manufacturer Part Number: | IPG20N10S4L35ATMA1 |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Arrays |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET 2N-CH 8TDSON |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IPG20N10S4L35ATMA1 Datasheet |
Internal Part Number | 898-IPG20N10S4L35ATMA1 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Infineon Technologies | |
Series | Automotive, AEC-Q101, OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | 2 N-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 20A | |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 17A, 10V | |
Vgs(th) (Max) @ Id | 2.1V @ 16µA | |
Gate Charge (Qg) @ Vgs | 17.4nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1105pF @ 25V | |
Power - Max | 43W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerVDFN | |
Supplier Device Package | PG-TDSON-8-4 (5.15x6.15) | |
Standard Package | 5,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IPG20N10S4L35ATMA1 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IPG20N10S4L35ATMA1 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IPG20N10S4L35ATMA1 is new and unused, you can buy IPG20N10S4L35ATMA1 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IPG20N10S4L35ATMA1.
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