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| Manufacturer Part Number: | IRF730 |
|---|---|
| Manufacturer: | STMicroelectronics |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 400V 5.5A TO-220 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | Obsolete / Discontinued |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | IRF730 Datasheet |
| Internal Part Number | 898-IRF730 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| EDA / CAD Models | Download from Accelerated Designs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | STMicroelectronics | |
| Series | PowerMESH™ II | |
| Packaging | Tube | |
| Part Status | Obsolete | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 400V | |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 3A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 24nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 530pF @ 25V | |
| Power - Max | 100W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| Standard Package | 50 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IRF730 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IRF730 is in stock for immediate shipping now. We are the distributor of STMicroelectronics all series components. The condition of IRF730 is new and unused, you can buy IRF730 STMicroelectronics with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRF730.
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