Manufacturer Part Number: | IRF9953 |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Arrays |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET 2P-CH 30V 2.3A 8-SOIC |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | IRF9953 Datasheet |
Internal Part Number | 898-IRF9953 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
PCN Obsolescence/ EOL | EOL122B 02/Oct/2007 | |
EDA / CAD Models | Download from Accelerated Designs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
Packaging | Tube | |
Part Status | Obsolete | |
FET Type | 2 P-Channel (Dual) | |
FET Feature | Logic Level Gate | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 2.3A | |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 190pF @ 15V | |
Power - Max | 2W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO | |
Standard Package | 95 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | IRF9953 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
IRF9953 is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of IRF9953 is new and unused, you can buy IRF9953 Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IRF9953.
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