Stocking distributor of Electronic Components
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| Manufacturer Part Number: | IXTP8N65X2M |
|---|---|
| Manufacturer: | IXYS |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9050 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 650V 4A X2 TO-220 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | IXTP8N65X2M Datasheet |
| Internal Part Number | 898-IXTP8N65X2M | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | N-Channel Standard FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Series | - | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | |
| Rds On (Max) @ Id, Vgs | 550 mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 800pF @ 25V | |
| Power - Max | 32W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220 | |
| Standard Package | 50 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | IXTP8N65X2M | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
IXTP8N65X2M is in stock for immediate shipping now. We are the distributor of IXYS all series components. The condition of IXTP8N65X2M is new and unused, you can buy IXTP8N65X2M IXYS with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for IXTP8N65X2M.
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