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| Manufacturer Part Number: | MPS3563 |
|---|---|
| Manufacturer: | ON Semiconductor |
| Product Category: | Transistors - Bipolar (BJT) - RF |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | RF Transistor NPN 12V 50mA 1.5GHz 350W Through Hole TO-92 |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | Obsolete / Discontinued |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | MPS3563 Datasheet |
| Internal Part Number | 898-MPS3563 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| PCN Obsolescence/ EOL | Multiple Devices 30/Jun/2006 | |
| EDA / CAD Models | Download from Accelerated Designs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Packaging | Bulk | |
| Part Status | Obsolete | |
| Transistor Type | NPN | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 1.5GHz | |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz | |
| Gain | 14dB @ 200MHz | |
| Power - Max | 350W | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V | |
| Current - Collector (Ic) (Max) | 50mA | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Supplier Device Package | TO-92 | |
| Standard Package | 5,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | MPS3563 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
MPS3563 is in stock for immediate shipping now. We are the distributor of ON Semiconductor all series components. The condition of MPS3563 is new and unused, you can buy MPS3563 ON Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for MPS3563.
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