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| Manufacturer Part Number: | NTZS3151PT1H |
|---|---|
| Manufacturer: | ON Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET P-CH 20V 0.86A SOT563 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | NTZS3151PT1H Datasheet |
| Internal Part Number | 898-NTZS3151PT1H | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 860mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 950mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 5.6nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 458pF @ 16V | |
| Power - Max | 210mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | SOT-563-6 | |
| Standard Package | 4,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | NTZS3151PT1H | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
NTZS3151PT1H is in stock for immediate shipping now. We are the distributor of ON Semiconductor all series components. The condition of NTZS3151PT1H is new and unused, you can buy NTZS3151PT1H ON Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for NTZS3151PT1H.
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