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| Manufacturer Part Number: | RCX081N20 |
|---|---|
| Manufacturer: | Rohm Semiconductor |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9270 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 200V 8A TO220 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | RCX081N20 Datasheet |
| Internal Part Number | 898-RCX081N20 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | N-Channel Standard FETs | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Rohm Semiconductor | |
| Series | - | |
| Packaging | Bulk | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 770 mOhm @ 4A, 10V | |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 8.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V | |
| Power - Max | 2.23W | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220FM | |
| Standard Package | 500 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | RCX081N20 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
RCX081N20 is in stock for immediate shipping now. We are the distributor of Rohm Semiconductor all series components. The condition of RCX081N20 is new and unused, you can buy RCX081N20 Rohm Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RCX081N20.
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