| Manufacturer Part Number: | RN1106MFV(TL3,T) |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Category: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Available Quantity: | 17010 Pieces |
| Unit Price: | Quote by Email |
| Description: | TRANS PREBIAS NPN 0.15W VESM |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | RN1106MFV(TL3,T) Datasheet |
| Internal Part Number | 898-RN1106MFV(TL3,T) | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | NPN Pre-biased Transistors | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | 47k | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Standard Package | 8,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | RN1106MFV(TL3,T) | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
RN1106MFV(TL3,T) is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of RN1106MFV(TL3,T) is new and unused, you can buy RN1106MFV(TL3,T) Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RN1106MFV(TL3,T).
| BZT52C6V8-E3-18 | Zener Diode 6.8V 410mW ±5% Surface Mount SOD-123 | BZT52C6V8-E3-18.pdf | |
| DDZ31Q-7 | Zener Diode 31.1V 310mW ±3% Surface Mount SOD-123 | DDZ31Q-7.pdf | |
| 1N4549RB | Zener Diode 3.9V 500mW ±5% Chassis, Stud Mount DO-5 | 1N4549RB.pdf | |
| RSU002N06T106 | MOSFET N-CH 60V 0.25A UMT3 | RSU002N06T106.pdf | |
| IPB80P04P4L04ATMA1 | MOSFET P-CH TO263-3 | IPB80P04P4L04ATMA1.pdf | |
| MWI45-12T6K | IGBT Module Trench Three Phase Inverter 1200V 43A 160W Chassis Mount E1 | MWI45-12T6K.pdf | |
| 8N4DV85AC-0040CDI | VCXO IC 622.08MHz, 669.3266MHz 6-CLCC | 8N4DV85AC-0040CDI.pdf | |
| LFE2-50E-5FN672C | IC FPGA 500 I/O 672FBGA | LFE2-50E-5FN672C.pdf | |
| PIC16C54C-20E/P | PIC PIC® 16C Microcontroller IC 8-Bit 20MHz 768B (512 x 12) OTP 18-PDIP | PIC16C54C-20E/P.pdf | |
| PIC16C56-HSI/P | PIC PIC® 16C Microcontroller IC 8-Bit 20MHz 1.5KB (1K x 12) OTP 18-PDIP | PIC16C56-HSI/P.pdf | |
| MB90347ESPMC-GS-388E1 | F²MC-16LX F²MC-16LX MB90340E Microcontroller IC 16-Bit 24MHz 128KB (128K x 8) Mask ROM 100-LQFP (14x14) | MB90347ESPMC-GS-388E1.pdf | |
| TS87C51RD2-LCE | 80C51 87C Microcontroller IC 8-Bit 30/20MHz 64KB (64K x 8) OTP | TS87C51RD2-LCE.pdf | |
| EL8401IU | Voltage Feedback Amplifier 4 Circuit Rail-to-Rail 16-QSOP | EL8401IU.pdf | |
| SN74AHC367DR | Buffer, Non-Inverting 2 Element 2, 4 (Hex) Bit per Element Push-Pull Output 16-SOIC | SN74AHC367DR.pdf | |
| 74ABT16646CSSCX | Transceiver, Non-Inverting 2 Element 8 Bit per Element Push-Pull Output 56-SSOP | 74ABT16646CSSCX.pdf |