| Manufacturer Part Number: | RN1961(TE85L,F) |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Category: | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | TRANS 2NPN PREBIAS 0.2W US6 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | RN1961(TE85L,F) Datasheet |
| Internal Part Number | 898-RN1961(TE85L,F) | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | NPN Pre-Biased Transistor Arrays | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Active | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | 4.7k | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | 250MHz | |
| Power - Max | 200mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | US6 | |
| Standard Package | 3,000 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | RN1961(TE85L,F) | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
RN1961(TE85L,F) is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of RN1961(TE85L,F) is new and unused, you can buy RN1961(TE85L,F) Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RN1961(TE85L,F).
| ES2DHE3_A/H | DIODE GEN PURP 200V 2A DO214AA | ES2DHE3_A/H.pdf | |
| MM3Z9V1B | Zener Diode 9.1V 200mW ±2% Surface Mount SOD-323F | MM3Z9V1B.pdf | |
| 1N5228B-TP | Zener Diode 3.9V 500mW ±5% Through Hole DO-35 | 1N5228B-TP.pdf | |
| BZX55C30 | Zener Diode 30V 500mW ±7% Through Hole DO-35 | BZX55C30.pdf | |
| RN2316(TE85L,F) | TRANS PREBIAS PNP 0.1W USM | RN2316(TE85L,F).pdf | |
| BCR 148L3 E6327 | TRANS PREBIAS NPN 250MW TSLP-3 | BCR 148L3 E6327.pdf | |
| CM300HA-24H | IGBT Module Single 1200V 300A 2100W Chassis Mount Module | CM300HA-24H.pdf | |
| GAL20V8B-25LJN | IC CPLD 8MC 25NS 28PLCC | GAL20V8B-25LJN.pdf | |
| MKL16Z128VFT4 | ARM® Cortex®-M0+ Kinetis KL1 Microcontroller IC 32-Bit 48MHz 128KB (128K x 8) FLASH 48-QFN (7x7) | MKL16Z128VFT4.pdf | |
| PIC24FJ128GA606T-I/MR | PIC PIC® 24F Microcontroller IC 16-Bit 32MHz 128KB (43K x 24) FLASH 64-QFN Exposed Pad (9x9) | PIC24FJ128GA606T-I/MR.pdf | |
| A2F500M3G-PQG208I | ARM® Cortex®-M3 System On Chip (SOC) IC SmartFusion® ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops 512KB 64KB 80MHz 208-PQFP (28x28) | A2F500M3G-PQG208I.pdf | |
| MAX213IDBR | 4/5 Transceiver Full RS232 28-SSOP | MAX213IDBR.pdf | |
| LM339PW | Comparator Differential CMOS, MOS, Open-Collector, TTL 14-TSSOP | LM339PW.pdf | |
| SN74HC540PWTG4 | Buffer, Inverting 1 Element 8 Bit per Element Push-Pull Output 20-TSSOP | SN74HC540PWTG4.pdf | |
| MT29F2G08ABAFAH4-S:F | IC FLASH 2GBIT 63VFBGA | MT29F2G08ABAFAH4-S:F.pdf |