Manufacturer Part Number: | RT1A050ZPTR |
---|---|
Manufacturer: | Rohm Semiconductor |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 15010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET P-CH 12V 5A TSST8 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | RT1A050ZPTR Datasheet |
Internal Part Number | 898-RT1A050ZPTR | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Featured Product | MOSFET ECOMOS | |
Online Catalog | P-Channel Logic Level Gate FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Rohm Semiconductor | |
Series | - | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET P-Channel, Metal Oxide | |
FET Feature | Logic Level Gate, 1.5V Drive | |
Drain to Source Voltage (Vdss) | 12V | |
Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 5A, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) @ Vgs | 34nC @ 4.5V | |
Input Capacitance (Ciss) @ Vds | 2800pF @ 6V | |
Power - Max | 600mW | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SMD, Flat Lead | |
Supplier Device Package | 8-TSST | |
Standard Package | 3,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | RT1A050ZPTR | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
RT1A050ZPTR is in stock for immediate shipping now. We are the distributor of Rohm Semiconductor all series components. The condition of RT1A050ZPTR is new and unused, you can buy RT1A050ZPTR Rohm Semiconductor with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for RT1A050ZPTR.
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