Manufacturer Part Number: | SI4825DY-T1-E3 |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET P-CH 30V 8.1A 8-SOIC |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | Obsolete / Discontinued |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SI4825DY-T1-E3 Datasheet |
Internal Part Number | 898-SI4825DY-T1-E3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Video File | MOSFET Technologies for Power Conversion | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
Packaging | Tape & Reel (TR) | |
Part Status | Obsolete | |
FET Type | MOSFET P-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 8.1A (Ta) | |
Rds On (Max) @ Id, Vgs | 14 mOhm @ 11.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) @ Vgs | 71nC @ 10V | |
Input Capacitance (Ciss) @ Vds | - | |
Power - Max | 1.5W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Supplier Device Package | 8-SO | |
Standard Package | 2,500 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SI4825DY-T1-E3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SI4825DY-T1-E3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SI4825DY-T1-E3 is new and unused, you can buy SI4825DY-T1-E3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SI4825DY-T1-E3.
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