Manufacturer Part Number: | SIJA54DP-T1-GE3 |
---|---|
Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 40V 60A PPAK SO-8L |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SIJA54DP-T1-GE3 Datasheet |
Internal Part Number | 898-SIJA54DP-T1-GE3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Vishay Siliconix | |
Series | TrenchFET® | |
Packaging | Tape & Reel (TR) | |
Part Status | New Product | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 40V | |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
Rds On (Max) @ Id, Vgs | 2.35 mOhm @ 15A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 104nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 5300pF @ 20V | |
Power - Max | 33.3W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | PowerPAK® SO-8 | |
Supplier Device Package | PowerPAK® SO-8 | |
Standard Package | 3,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SIJA54DP-T1-GE3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SIJA54DP-T1-GE3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SIJA54DP-T1-GE3 is new and unused, you can buy SIJA54DP-T1-GE3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SIJA54DP-T1-GE3.
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