Manufacturer Part Number: | SQJ951EP-T1_GE3 |
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Manufacturer: | Vishay Siliconix |
Product Category: | Transistors - FETs, MOSFETs - Arrays |
Available Quantity: | 9010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET 2P-CH 30V 30A PPAK |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | SQJ951EP-T1_GE3 Datasheet |
Internal Part Number | 898-SQJ951EP-T1_GE3 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
PCN Part Number | New Ordering Code 19/Mar/2015 | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Vishay Siliconix | |
Series | Automotive, AEC-Q101, TrenchFET® | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | 2 P-Channel (Dual) | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 30A | |
Rds On (Max) @ Id, Vgs | 17 mOhm @ 7.5A, 10V | |
Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
Gate Charge (Qg) @ Vgs | 50nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1680pF @ 10V | |
Power - Max | 56W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | PowerPAK® SO-8 Dual | |
Supplier Device Package | PowerPAK® SO-8 Dual | |
Standard Package | 3,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | SQJ951EP-T1_GE3 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
SQJ951EP-T1_GE3 is in stock for immediate shipping now. We are the distributor of Vishay Siliconix all series components. The condition of SQJ951EP-T1_GE3 is new and unused, you can buy SQJ951EP-T1_GE3 Vishay Siliconix with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for SQJ951EP-T1_GE3.
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