Manufacturer Part Number: | STP80N10F7 |
---|---|
Manufacturer: | STMicroelectronics |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 10393 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 100V 80A TO-220 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | STP80N10F7 Datasheet |
Internal Part Number | 898-STP80N10F7 | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Product Training Modules | Low Voltage Power MOSFETs | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | STMicroelectronics | |
Series | DeepGATE™, STripFET™ VII | |
Packaging | Tube | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 40A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
Gate Charge (Qg) @ Vgs | 45nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 3100pF @ 50V | |
Power - Max | 110W | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Supplier Device Package | TO-220 | |
Standard Package | 50 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | STP80N10F7 | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
STP80N10F7 is in stock for immediate shipping now. We are the distributor of STMicroelectronics all series components. The condition of STP80N10F7 is new and unused, you can buy STP80N10F7 STMicroelectronics with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for STP80N10F7.
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