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| Manufacturer Part Number: | TC58BYG2S0HBAI6 |
|---|---|
| Manufacturer: | Toshiba Semiconductor and Storage |
| Product Category: | Memory |
| Available Quantity: | 9436 Pieces |
| Unit Price: | Quote by Email |
| Description: | EEPROM SLC 4GB NAND 24NM 67VFBGA |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | TC58BYG2S0HBAI6 Datasheet |
| Internal Part Number | 898-TC58BYG2S0HBAI6 | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Online Catalog | SLC NAND Flash Memory | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Manufacturer | Toshiba Semiconductor and Storage | |
| Series | Benand™ | |
| Packaging | Tray | |
| Part Status | Active | |
| Format - Memory | EEPROMs - Serial | |
| Memory Type | EEPROM - NAND | |
| Memory Size | 4G (512M x 8) | |
| Speed | 25ns | |
| Interface | Parallel | |
| Voltage - Supply | 1.7 V ~ 1.95 V | |
| Operating Temperature | -40°C ~ 85°C (TA) | |
| Package / Case | 67-VFBGA | |
| Supplier Device Package | 67-VFBGA (6.5x8) | |
| Standard Package | 96 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | TC58BYG2S0HBAI6 | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
TC58BYG2S0HBAI6 is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of TC58BYG2S0HBAI6 is new and unused, you can buy TC58BYG2S0HBAI6 Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for TC58BYG2S0HBAI6.
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