Manufacturer Part Number: | TK6A80E,S4X |
---|---|
Manufacturer: | Toshiba Semiconductor and Storage |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 9072 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 800V TO220SIS |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | TK6A80E,S4X Datasheet |
Internal Part Number | 898-TK6A80E,S4X | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Toshiba Semiconductor and Storage | |
Series | - | |
Packaging | Tube | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) | |
Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 600µA | |
Gate Charge (Qg) @ Vgs | 32nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1350pF @ 25V | |
Power - Max | 45W | |
Operating Temperature | 150°C (TJ) | |
Mounting Type | Through Hole | |
Package / Case | TO-220-3 Full Pack, Isolated Tab | |
Supplier Device Package | TO-220SIS | |
Standard Package | 150 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | TK6A80E,S4X | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
TK6A80E,S4X is in stock for immediate shipping now. We are the distributor of Toshiba Semiconductor and Storage all series components. The condition of TK6A80E,S4X is new and unused, you can buy TK6A80E,S4X Toshiba Semiconductor and Storage with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for TK6A80E,S4X.
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