Manufacturer Part Number: | BSC16DN25NS3 G |
---|---|
Manufacturer: | Infineon Technologies |
Product Category: | Transistors - FETs, MOSFETs - Single |
Available Quantity: | 14010 Pieces |
Unit Price: | Quote by Email |
Description: | MOSFET N-CH 250V 10.9A 8TDSON |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Production Status (Lifecycle): | In Production |
Delivery Time: | 1-2 Days |
Date Code (D/C): | New |
Datasheet Download: | BSC16DN25NS3 G Datasheet |
Internal Part Number | 898-BSC16DN25NS3 G | |
Manufacturer Lead time | 6-8 weeks | |
Condition | New & Unused, Original Sealed | |
Online Catalog | N-Channel Standard FETs | |
Category | Discrete Semiconductor Products | |
Family | Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
Packaging | Tape & Reel (TR) | |
Part Status | Active | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 250V | |
Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) | |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 32µA | |
Gate Charge (Qg) @ Vgs | 11.4nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 920pF @ 100V | |
Power - Max | 62.5W | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Package / Case | 8-PowerTDFN | |
Supplier Device Package | PG-TDSON-8 | |
Standard Package | 5,000 | |
Weight | 0.001 KG | |
Application | Email for details | |
Replacement Part | BSC16DN25NS3 G | |
Country of Origin | USA / JAPAN / Philippines / Malaysia | |
MOQ | 1 Piece | |
Picture / Image / Photo | Send via email |
BSC16DN25NS3 G is in stock for immediate shipping now. We are the distributor of Infineon Technologies all series components. The condition of BSC16DN25NS3 G is new and unused, you can buy BSC16DN25NS3 G Infineon Technologies with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for BSC16DN25NS3 G.
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