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| Manufacturer Part Number: | APT20M45BVRG |
|---|---|
| Manufacturer: | Microsemi Corporation |
| Product Category: | Transistors - FETs, MOSFETs - Single |
| Available Quantity: | 9010 Pieces |
| Unit Price: | Quote by Email |
| Description: | MOSFET N-CH 200V 56A TO-247 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Production Status (Lifecycle): | In Production |
| Delivery Time: | 1-2 Days |
| Date Code (D/C): | New |
| Datasheet Download: | APT20M45BVRG Datasheet |
| Internal Part Number | 898-APT20M45BVRG | |
| Manufacturer Lead time | 6-8 weeks | |
| Condition | New & Unused, Original Sealed | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Microsemi Corporation | |
| Series | POWER MOS V® | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 195nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4860pF @ 25V | |
| Power - Max | 300W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 [B] | |
| Standard Package | 1 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Replacement Part | APT20M45BVRG | |
| Country of Origin | USA / JAPAN / Philippines / Malaysia | |
| MOQ | 1 Piece | |
| Picture / Image / Photo | Send via email | |
APT20M45BVRG is in stock for immediate shipping now. We are the distributor of Microsemi Corporation all series components. The condition of APT20M45BVRG is new and unused, you can buy APT20M45BVRG Microsemi Corporation with us at a very low price and quick delivery.
Please kindly send us an email if you have any demands for APT20M45BVRG.
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